Magnetic field detection apparatus and current detection apparatus

ABSTRACT

A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a Continuation Application of U.S. patent application Ser. No.17/081,232, filed Oct. 27, 2020, which claims the benefit of JapanesePriority Patent Application Nos. 2019-224096 filed on Dec. 11, 2019 and2020-030876 filed on Feb. 26, 2020, the entire contents of each of whichare incorporated herein by reference.

BACKGROUND

The disclosure relates to a magnetic field detection apparatus and acurrent detection apparatus each of which includes a magnetoresistiveeffect element.

Some magnetic field detection apparatuses using magnetoresistive effectelements have been proposed. For example, Japanese Unexamined PatentApplication Publication No. 2016-001118 discloses a magnetic fielddetection apparatus including a magnetoresistive effect element and aconductor, in which a centerline of the conductor along the direction ofa current flow and a centerline of the magnetoresistive effect elementalong the direction of its length are oriented in different directionsfrom each other.

SUMMARY

A first magnetic field detection apparatus according to one embodimentof the disclosure includes a magnetoresistive effect element and aconductor. The magnetoresistive effect element includes amagnetoresistive effect film that extends in a first axis direction andincludes a first end part, a second end part, and an intermediate partbetween the first end part and the second end part. The conductorincludes a first part and a second part each extending in a second axisdirection inclined with respect to the first axis direction. Theconductor is configured to be supplied with a current and therebyconfigured to generate an induction magnetic field to be applied to themagnetoresistive effect film in a third axis direction orthogonal to thesecond axis direction. Here, the first part and the second partrespectively overlap the first end part and the second end part in afourth axis direction orthogonal to both of the second axis directionand the third axis direction.

A second magnetic field detection apparatus according to one embodimentof the disclosure includes a first and a second magnetoresistive effectelement, and a first and a second conductor. The first magnetoresistiveeffect element includes a first magnetoresistive effect film thatextends in a first axis direction. The first conductor includes a firstpart and a second part that each extend in a second axis directioninclined with respect to the first axis direction and that are adjacentto each other in a third axis direction different from both of the firstaxis direction and the second axis direction. The second conductorincludes a third part and a fourth part that each extend in the secondaxis direction and that are adjacent to each other in the third axisdirection. The second magnetoresistive effect element includes a secondmagnetoresistive effect film that extends in the first axis direction.The first magnetoresistive effect film includes a first end part, asecond end part, and a first intermediate part between the first endpart and the second end part. The second magnetoresistive effect filmincludes a third end part, a fourth end part, and a second intermediatepart between the third end part and the fourth end part. The first partand the second part of the first conductor respectively overlap thefirst end part and the second end part of the first magnetoresistiveeffect film in a fourth axis direction orthogonal to both of the secondaxis direction and the third axis direction. The first part and thesecond part are each configured to be supplied with a first current andthereby configured to generate a first induction magnetic field to beapplied to the first end part and the second end part in the third axisdirection. The third part and the fourth part of the second conductorrespectively overlap the third end part and the fourth end part of thesecond magnetoresistive effect film in the fourth axis direction. Thethird part and the fourth part are each configured to be supplied with asecond current and thereby configured to generate a second inductionmagnetic field to be applied to the third end part and the fourth endpart in the third axis direction.

A current detection apparatus according to one embodiment of thedisclosure includes a magnetoresistive effect element, a firstconductor, and a second conductor. The magnetoresistive effect elementincludes a magnetoresistive effect film that extends in a first axisdirection and includes a first end part, a second end part, and anintermediate part between the first end part and the second end part.The first conductor includes a first part and a second part that eachextend in a second axis direction inclined with respect to the firstaxis direction. The first conductor is configured to be supplied with afirst current and thereby configured to generate a first inductionmagnetic field to be applied to the magnetoresistive effect film in afirst direction along a third axis direction orthogonal to the secondaxis direction. The second conductor is configured to be supplied with asecond current and thereby configured to generate a second inductionmagnetic field to be applied to the magnetoresistive effect film in asecond direction opposite to the first direction. The first part and thesecond part respectively overlap the first end part and the second endpart in a fourth axis direction orthogonal to both of the second axisdirection and the third axis direction.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the technology and are incorporated in and constitute apart of this specification. The drawings illustrate example embodimentsand, together with the specification, serve to explain the principles ofthe technology.

FIG. 1 is a schematic planar diagram illustrating an overallconfiguration example of a current detection apparatus according to oneexample embodiment of the disclosure.

FIG. 2A is a perspective diagram illustrating an overall configurationexample of a first current detection unit illustrated in FIG. 1.

FIG. 2B is a perspective diagram illustrating an overall configurationexample of a second current detection unit illustrated in FIG. 1.

FIG. 3A is a planar diagram for explaining a detailed configuration of afirst magnetoresistive effect element formed in a first elementformation region illustrated in FIG. 2A.

FIG. 3B is a schematic cross-sectional diagram illustrating a settingoperation in the first current detection unit illustrated in FIG. 2A.

FIG. 3C is a schematic cross-sectional diagram illustrating a resettingoperation in the first current detection unit illustrated in FIG. 2A.

FIG. 3D is a first schematic cross-sectional diagram illustrating acurrent detection operation in the first current detection unitillustrated in FIG. 2A.

FIG. 3E is a second schematic cross-sectional diagram illustrating thecurrent detection operation in the first current detection unitillustrated in FIG. 2A.

FIG. 3F is an explanatory diagram illustrating intensity distributionsof a setting magnetic field and a resetting magnetic field to be appliedto a first magnetoresistive effect film illustrated in FIG. 3A.

FIG. 3G is a planar diagram for explaining a detailed configuration of afourth magnetoresistive effect element formed in a fourth elementformation region illustrated in FIG. 2A.

FIG. 4A is a planar diagram for explaining a detailed configuration of athird magnetoresistive effect element formed in a third elementformation region illustrated in FIG. 2B.

FIG. 4B is a schematic cross-sectional diagram illustrating the settingoperation in the second current detection unit illustrated in FIG. 2B.

FIG. 4C is a schematic cross-sectional diagram illustrating theresetting operation in the second current detection unit illustrated inFIG. 2B.

FIG. 4D is a first schematic cross-sectional diagram illustrating thecurrent detection operation in the second current detection unitillustrated in FIG. 2B.

FIG. 4E is a second schematic cross-sectional diagram illustrating thecurrent detection operation in the second current detection unitillustrated in FIG. 2B.

FIG. 4F is a planar diagram for explaining a detailed configuration of asecond magnetoresistive effect element formed in a second elementformation region illustrated in FIG. 2B.

FIG. 5A is a first enlarged schematic perspective view of a portion of ahelical coil.

FIG. 5B is a second enlarged schematic perspective view of the portionof the helical coil.

FIG. 6A is an exploded perspective diagram illustrating a stackedstructure of the first magnetoresistive effect film illustrated in FIG.3A.

FIG. 6B is an exploded perspective diagram illustrating a stackedstructure of a second magnetoresistive effect film illustrated in FIG.4C.

FIG. 6C is an exploded perspective diagram illustrating a stackedstructure of a third magnetoresistive effect film illustrated in FIG.4B.

FIG. 6D is an exploded perspective diagram illustrating a stackedstructure of a fourth magnetoresistive effect film illustrated in FIG.4A.

FIG. 7 is a circuit diagram of the current detection apparatusillustrated in FIG. 1.

FIG. 8 is a first enlarged schematic perspective view of a portion of ahelical coil according to one modification example.

FIG. 9 is a second enlarged schematic perspective view of the portion ofthe helical coil according to the modification example.

FIG. 10A is a schematic planar diagram illustrating an overallconfiguration example of a magnetic field detection apparatus accordingto one example embodiment of the disclosure.

FIG. 10B is a circuit diagram of the magnetic field detection apparatusillustrated in FIG. 10A.

FIG. 11A is a planar diagram for explaining a detailed configuration ofa first element formation region illustrated in FIG. 10A.

FIG. 11B is a cross-sectional diagram for explaining the detailedconfiguration of the first element formation region illustrated in FIG.10A.

FIG. 12 is a planar diagram for explaining a detailed configuration of asecond element formation region illustrated in FIG. 10A.

FIG. 13 is a planar diagram for explaining a detailed configuration of athird element formation region illustrated in FIG. 10A.

FIG. 14 is a planar diagram for explaining a detailed configuration of afourth element formation region illustrated in FIG. 10A.

DETAILED DESCRIPTION

It is demanded that magnetic field detection apparatuses usingmagnetoresistive effect elements be reduced in size and improved indetection accuracy.

It is desirable to provide a magnetic field detection apparatus and acurrent detection apparatus that achieve high detection accuracy whilebeing small in size.

In the following, some example embodiments and modification examples ofthe technology are described in detail with reference to theaccompanying drawings. Note that the following description is directedto illustrative examples of the technology and not to be construed aslimiting the technology. Factors including, without limitation,numerical values, shapes, materials, components, positions of thecomponents, and how the components are coupled to each other areillustrative only and not to be construed as limiting the technology.Further, elements in the following example embodiments which are notrecited in a most-generic independent claim of the disclosure areoptional and may be provided on an as-needed basis. The drawings areschematic and are not intended to be drawn to scale. Like elements aredenoted with the same reference numerals to avoid redundantdescriptions. Note that the description is given in the following order.

1. Example Embodiment (an example of a current detection apparatus thatdetects a current flowing through a bus and includes a bridge circuitand a helical coil, the bridge circuit including four magnetoresistiveeffect elements, the helical coil having a winding direction thatreverses at an intermediate point along the coil)

2. Modification Examples 1. Example Embodiment [Configuration of CurrentDetection Apparatus 100]

First, a configuration of a current detection apparatus 100 according toan example embodiment of the disclosure will be described with referenceto FIGS. 1 to 7.

FIG. 1 is a schematic planar diagram illustrating an overallconfiguration example of the current detection apparatus 100. Asillustrated in FIG. 1, the current detection apparatus 100 may include acurrent line (a bus) 5 to be supplied with a signal current Im (Im1,Im2) to be detected, and a substrate 1 provided with current detectionunits 10A and 10B. The current detection unit 10A may include amagnetoresistive effect element 11 formed in an element formation regionX1, a magnetoresistive effect element 14 formed in an element formationregion X4, and a coil part 6A. The current detection unit 10B mayinclude a magnetoresistive effect element 13 formed in an elementformation region X3, a magnetoresistive effect element 12 formed in anelement formation region X2, and a coil part 6B. The coil part 6A andthe coil part 6B may be coupled to each other in series to form a singlehelical coil 6. The helical coil 6 is configured to be supplied with afeedback current If (If1, If2), a setting current Is, and a resettingcurrent Ir, all of which will be described in detail later. Note thatthe feedback current If, the setting current Is, and the resettingcurrent Ir may be supplied to the helical coil 6 at mutually differenttimings.

The magnetoresistive effect elements 11 to 14 in the present exampleembodiment may each correspond to a specific but non-limiting example ofa “magnetoresistive effect element” according to one embodiment of thedisclosure. Each of the magnetoresistive effect elements 11 and 14 mayalso correspond to a specific but non-limiting example of a “firstmagnetoresistive effect element” according to one embodiment of thedisclosure, and each of the magnetoresistive effect elements 12 and 13may also correspond to a specific but non-limiting example of a “secondmagnetoresistive effect element” according to one embodiment of thedisclosure. Further, the helical coil 6 may correspond to a specific butnon-limiting example of a “conductor” and a “first conductor” accordingto one embodiment of the disclosure. The bus 5 may correspond to aspecific but non-limiting example of a “second conductor” according toone embodiment of the disclosure.

[Current Detection Unit 10A]

FIG. 2A is an enlarged perspective view of the current detection unit10A illustrated in FIG. 1. As illustrated in FIG. 2A, the currentdetection unit 10A may have a structure in which, for example, a lowerwiring line 6LA, the substrate 1 including the magnetoresistive effectelement 11 and the magnetoresistive effect element 14 arranged side byside in a Y-axis direction, and an upper wiring line 6UA are stacked inthis order in a Z-axis direction above the bus 5. The upper wiring line6UA and the lower wiring line 6LA may constitute a portion of the coilpart 6A and may be coupled to each other in series. FIG. 2A illustratesan example in which the lower wiring line 6LA includes eight lowerwiring line patterns 61LA to 68LA, and the upper wiring line 6UAincludes two upper wiring line patterns 61UA and 62UA. In an embodimentof the disclosure, however, the number of the lower wiring line patternsof the lower wiring line 6LA and the number of the upper wiring linepatterns of the upper wiring line 6UA are not limited to these numbersand may be set to any numbers. The eight lower wiring line patterns 61LAto 68LA may be coupled to a single power supply in parallel. The twoupper wiring line patterns 61UA and 62UA may also be coupled to thepower supply in parallel. Because the upper wiring line 6UA and thelower wiring line 6LA may be coupled to each other in series, in a casewhere, for example, a setting current Is in a +Y direction flows throughthe upper wiring line 6UA (the upper wiring line patterns 61UA and62UA), a setting current Is in a −Y direction may flow through the lowerwiring line 6LA (the eight lower wiring line patterns 61LA to 68LA). Ina case where a resetting current Ir in the −Y direction flows throughthe upper wiring line 6UA, a resetting current Ir in the +Y directionmay flow through the lower wiring line 6LA. Further, in a case where asignal current Im1 in the +Y direction flows through the bus 5, afeedback current If1 in the +Y direction may flow through the upperwiring line 6UA, and a feedback current If1 in the −Y direction may flowthrough the lower wiring line 6LA. Further, in a case where a signalcurrent Im2 in the −Y direction flows through the bus 5, a feedbackcurrent If2 in the −Y direction may flow through the upper wiring line6UA, and a feedback current If2 in the +Y direction may flow through thelower wiring line 6LA. Note that a reference sign If1 in FIG. 1indicates the direction of the feedback current flowing through theupper wiring line 6UA and the lower wiring line 6LA. In FIG. 2A, anarrow with a reference sign JS11 indicates a direction of amagnetization JS11 of a magnetization pinned layer S11 (described later)of a magnetoresistive effect film MR1 (described later) included in themagnetoresistive effect element 11, and an arrow with a reference signJS41 indicates a direction of a magnetization JS41 of a magnetizationpinned layer S41 (described later) of a magnetoresistive effect film MR4(described later) included in the magnetoresistive effect element 14.

The upper wiring line patterns 61UA and 62UA and the lower wiring linepatterns 61LA to 68LA may all extend in the Y-axis direction. The lowerwiring line patterns 61LA to 64LA may be disposed opposite to the upperwiring line pattern 61UA, with the magnetoresistive effect elements 11and 14 being interposed between the upper wiring line pattern 61UA andthe lower wiring line patterns 61LA to 64LA in the Z-axis direction. Thelower wiring line patterns 65LA to 68LA may be disposed opposite to theupper wiring line pattern 62UA, with the magnetoresistive effectelements 11 and 14 being interposed between the upper wiring linepattern 62UA and the lower wiring line patterns 65LA to 68LA in theZ-axis direction.

Here, the upper wiring line pattern 61UA may correspond to a specificbut non-limiting example of a “first part” according to one embodimentof the disclosure, and the upper wiring line pattern 62UA may correspondto a specific but non-limiting example of a “second part” according toone embodiment of the disclosure. Further, the lower wiring linepatterns 61LA to 64LA may each correspond to a specific but non-limitingexample of a “third part” according to one embodiment of the disclosure,and the lower wiring line patterns 65LA to 68LA may each correspond to aspecific but non-limiting example of a “fourth part” according to oneembodiment of the disclosure.

[Current Detection Unit 10B]

FIG. 2B is an enlarged perspective view of the current detection unit10B illustrated in FIG. 1. As illustrated in FIG. 2B, the currentdetection unit 10B may have a structure in which, for example, a lowerwiring line 6LB, the substrate 1 including the magnetoresistive effectelement 13 and the magnetoresistive effect element 12 arranged side byside in the Y-axis direction, and the upper wiring line 6UB are stackedin this order in the Z-axis direction above the bus 5. Note that the bus5 and the substrate 1 may be common between the current detection unit10A and the current detection unit 10B. The upper wiring line 6UB andthe lower wiring line 6LB may constitute a portion of the coil part 6Band may be coupled to each other in series. FIG. 2B illustrates anexample in which the lower wiring line 6LB includes eight lower wiringline patterns 61LB to 68LB, and the upper wiring line 6UB includes twoupper wiring line patterns 61UB and 62UB. In an embodiment of thedisclosure, however, the number of the lower wiring line patterns of thelower wiring line 6LB and the number of the upper wiring line patternsof the upper wiring line 6UB are not limited to these numbers and may beset to any numbers. The eight lower wiring line patterns 61LB to 68LBmay be coupled to the foregoing power supply in parallel. The two upperwiring line patterns 61UB and 62UB may also be coupled to the powersupply in parallel. In FIG. 2B, an arrow with a reference sign JS31indicates a direction of a magnetization JS31 of a magnetization pinnedlayer S31 (described later) of a magnetoresistive effect film MR3(described later) included in the magnetoresistive effect element 13,and an arrow with a reference sign JS21 indicates a direction of amagnetization JS21 of a magnetization pinned layer S21 (described later)of a magnetoresistive effect film MR2 (described later) included in themagnetoresistive effect element 12.

Because the coil part 6A and the coil part 6B may be coupled to eachother in series, a setting current Is and a resetting current Irsupplied from the power supply common between the coil part 6A and thecoil part 6B may flow through the coil part 6B. In the current detectionunit 10B, however, the setting current Is and the resetting current Irmay flow in directions opposite to those in the current detection unit10A. In a specific but non-limiting example, in a case where a settingcurrent Is in the −Y direction flows through the upper wiring line 6UB(the upper wiring line patterns 61UB and 62UB), a setting current Is inthe +Y direction may flow through the lower wiring line 6LB (the eightlower wiring line patterns 61LB to 68LB). In a case where a resettingcurrent Ir in the +Y direction flows through the upper wiring line 6UB(the upper wiring line patterns 61UB and 62UB), a resetting current Irin the −Y direction may flow through the lower wiring line 6LB (theeight lower wiring line patterns 61LB to 68LB). Further, in a case wherea signal current Im1 in the +Y direction flows through the bus 5, afeedback current If1 in the +Y direction may flow through the upperwiring line 6UB, and a feedback current If1 in the −Y direction may flowthrough the lower wiring line 6LB. Further, in a case where a signalcurrent Im2 in the −Y direction flows through the bus 5, a feedbackcurrent If2 in the −Y direction may flow through the upper wiring line6UB, and a feedback current If2 in the +Y direction may flow through thelower wiring line 6LB. Note that the reference sign If1 in FIG. 1indicates the direction of the feedback current flowing through theupper wiring line 6UB and the upper wiring line 6UA.

The upper wiring line patterns 61UB and 62UB and the lower wiring linepatterns 61LB to 68LB may all extend in the Y-axis direction. The lowerwiring line patterns 61LB to 64LB may be disposed opposite to the upperwiring line pattern 61UB, with the magnetoresistive effect elements 13and 12 being interposed between the upper wiring line pattern 61UB andthe lower wiring line patterns 61LB to 64LB in the Z-axis direction. Thelower wiring line patterns 65LB to 68LB may be disposed opposite to theupper wiring line pattern 62UB, with the magnetoresistive effectelements 13 and 12 being interposed between the upper wiring linepattern 62UB and the lower wiring line patterns 65LB to 68LB in theZ-axis direction.

Here, the upper wiring line pattern 61UB may correspond to a specificbut non-limiting example of the “first part” according to one embodimentof the disclosure, and the upper wiring line pattern 62UB may correspondto a specific but non-limiting example of the “second part” according toone embodiment of the disclosure. Further, the lower wiring linepatterns 61LB to 64LB may each correspond to a specific but non-limitingexample of the “third part” according to one embodiment of thedisclosure, and the lower wiring line patterns 65LB to 68LB may eachcorrespond to a specific but non-limiting example of the “fourth part”according to one embodiment of the disclosure.

[Magnetoresistive Effect Element 11]

FIG. 3A is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect element 11 formed in the element formationregion X1 of the current detection unit 10A. Further, FIGS. 3B to 3E arecross-sectional diagrams each illustrating a portion of the currentdetection unit 10A. Note that FIG. 3A illustrates a plurality ofmagnetoresistive effect films MR1 constituting the magnetoresistiveeffect element 11 and the upper wiring line patterns 61UA and 62UAdisposed above the magnetoresistive effect films MR1, and omits othercomponents.

As illustrated in FIG. 3A, the magnetoresistive effect element 11 mayinclude a plurality of magnetoresistive effect films MR1 arranged in theY-axis direction. The plurality of magnetoresistive effect films MR1 maybe coupled to each other in series, and may each extend in a W-axisdirection that is inclined with respect to both of an X-axis directionand the Y-axis direction. Thus, the plurality of magnetoresistive effectfilms MR1 may each have a shape anisotropy in the W-axis direction. Anangle θ1 formed between the W-axis direction and the Y-axis directionmay be 45°, for example. Each of the plurality of magnetoresistiveeffect films MR1 includes a first end part 11A, a second end part 11B,and an intermediate part 11C between the first end part 11A and thesecond end part 11B. The first end part 11A and the second end part 11Bmay be portions that respectively include a first end 11AT and a secondend 11BT of the magnetoresistive effect film MR1 that are opposite toeach other in the W-axis direction. Further, in FIG. 3A, an arrow with areference sign JS13 indicates a magnetization direction of amagnetization free layer S13 (described later) in an initial state ineach magnetoresistive effect film MR1. In a specific but non-limitingexample, the direction of the magnetization JS13 of the magnetizationfree layer S13 in the initial state may be substantially parallel to theW-axis direction. Further, an arrow with the reference sign JS11 in FIG.3A indicates the direction of the magnetization JS11 of themagnetization pinned layer S11 (described later) in eachmagnetoresistive effect film MR1. In a specific but non-limitingexample, the direction of the magnetization JS11 may be substantiallyparallel to a V-axis direction orthogonal to the W-axis direction. Themagnetoresistive effect films MR1 may thus have sensitivity in theV-axis direction.

Here, the W-axis direction J1 may correspond to a specific butnon-limiting example of a “first axis direction” according to oneembodiment of the disclosure. The Y-axis direction may correspond to aspecific but non-limiting example of a “second axis direction” accordingto one embodiment of the disclosure. The X-axis direction may correspondto a specific but non-limiting example of a “third axis direction”according to one embodiment of the disclosure. The Z-axis direction maycorrespond to a specific but non-limiting example of a “fourth axisdirection” according to one embodiment of the disclosure.

The upper wiring line pattern 61UA and the upper wiring line pattern62UA of the helical coil 6 overlap the first end part 11A and the secondend part 11B, respectively, in the Z-axis direction. The lower wiringline patterns 61LA to 64LA of the helical coil 6 may each overlap thefirst end part 11A in the Z-axis direction. Likewise, the lower wiringline patterns 65LA to 68LA of the helical coil 6 may each overlap thesecond end part 11B in the Z-axis direction. In a specific butnon-limiting example, the upper wiring line pattern 61UA may overlap thefirst end 11AT in the first end part 11A in the Z-axis direction, andthe upper wiring line pattern 62UA may overlap the second end 11BT inthe second end part 11B in the Z-axis direction.

Thus, in the current detection unit 10A, as illustrated in FIGS. 3A and3B, supplying the helical coil 6 with a setting current Is causes asetting magnetic field SF− in a −X direction to be applied to themagnetoresistive effect film MR1. As illustrated in FIG. 3C, supplyingthe helical coil 6 with a resetting current Ir causes a resettingmagnetic field RF+ in a +X direction to be applied to themagnetoresistive effect film MR1. Further, as illustrated in FIG. 3D, ina case where a signal current Im1 in the +Y direction flows through thebus 5, a signal magnetic field Hm1 in the +X direction may be applied tothe magnetoresistive effect film MR1. In this case, supplying thehelical coil 6 with a feedback current If1 may cause a feedback magneticfield Hf1 in the −X direction to be applied to the magnetoresistiveeffect film MR1 to cancel out the signal magnetic field Hm1. Further, asillustrated in FIG. 3E, in a case where a signal current Im2 in the −Ydirection flows through the bus 5, a signal magnetic field Hm2 in the −Xdirection may be applied to the magnetoresistive effect film MR1. Inthis case, supplying the helical coil 6 with a feedback current If2 maycause a feedback magnetic field Hf2 in the +X direction to be applied tothe magnetoresistive effect film MR1 to cancel out the signal magneticfield Hm2.

It is to be noted that the setting magnetic field SF (SF+, SF−) and theresetting magnetic field RF (RF+, RF−) may correspond to a specific butnon-limiting example of an “induction magnetic field” or a “firstinduction magnetic field” according to one embodiment of the disclosure.

As illustrated in FIG. 3F, intensities (absolute values) of the settingmagnetic field SF and the resetting magnetic field RF to be applied toeach of the first end part 11A and the second end part 11B may be higherthan intensities (absolute values) of the setting magnetic field SF andthe resetting magnetic field RF to be applied to the intermediate part11C. One reason for this is that the first end part 11A and the secondend part 11B respectively overlap the upper wiring line pattern 61UA andthe upper wiring line pattern 62UA in the Z-axis direction whereas noupper wiring line patterns or no lower wiring line patterns overlap theintermediate part 11C in the Z-axis direction; in other words, theintermediate part 11C is disposed farther from the upper wiring linepatterns 61UA and 62UA and the lower wiring line patterns 61LA to 68LAof the helical coil 6, compared with the first end part 11A and thesecond end part 11B. Note that FIG. 3F is an explanatory diagramillustrating the intensity distribution in the X-axis direction of thesetting magnetic field SF and the resetting magnetic field RF to beapplied to the magnetoresistive effect film MR1. In FIG. 3F, thehorizontal axis represents position (arbitrary units) in the X-axisdirection, and the vertical axis represents the magnetic field intensity(arbitrary units).

[Magnetoresistive Effect Element 14]

FIG. 3G is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect element 14 formed in the element formationregion X4 of the current detection unit 10A. Note that FIG. 3Gillustrates a plurality of magnetoresistive effect films MR4constituting the magnetoresistive effect element 14 and the upper wiringline patterns 61UA and 62UA disposed above the magnetoresistive effectfilms MR4, and omits other components.

As illustrated in FIG. 3G, the magnetoresistive effect element 14 mayinclude a plurality of magnetoresistive effect films MR4 arranged in theY-axis direction. The plurality of magnetoresistive effect films MR4 maybe coupled to each other in series, and each extend in the W-axisdirection that is inclined with respect to both of the X-axis directionand the Y-axis direction. Thus, the plurality of magnetoresistive effectfilms MR4 may each have a shape anisotropy in the W-axis direction. Eachof the plurality of magnetoresistive effect films MR4 includes a firstend part 14A, a second end part 14B, and an intermediate part 14Cbetween the first end part 14A and the second end part 14B. Note thatthe first end part 14A and the second end part 14B may be portions thatrespectively include a first end 14AT and a second end 14BT of themagnetoresistive effect film MR4 that are opposite to each other in theW-axis direction. Further, in FIG. 3G, an arrow with a reference signJS43 indicates a magnetization direction of a magnetization free layerS43 (described later) in an initial state in each magnetoresistiveeffect film MR4. The direction of the magnetization JS43 of themagnetization free layer S43 in the initial state may be substantiallyparallel to the W-axis direction. Further, an arrow with the referencesign JS41 in FIG. 3G indicates the direction of the magnetization JS41of the magnetization pinned layer S41 (described later) in eachmagnetoresistive effect film MR4. The direction of the magnetizationJS41 may be substantially parallel to the V-axis direction orthogonal tothe W-axis direction. The magnetoresistive effect films MR4 may thushave sensitivity in the V-axis direction.

The upper wiring line pattern 61UA and the upper wiring line pattern62UA of the helical coil 6 overlap the first end part 14A and the secondend part 14B, respectively, in the Z-axis direction. The lower wiringline patterns 61LA to 64LA of the helical coil 6 may each overlap thefirst end part 11A in the Z-axis direction. Likewise, the lower wiringline patterns 65LA to 68LA of the helical coil 6 may each overlap thesecond end part 14B in the Z-axis direction. In a specific butnon-limiting example, the upper wiring line pattern 61UA may overlap thefirst end 14AT in the first end part 14A in the Z-axis direction, andthe upper wiring line pattern 62UA may overlap the second end 14BT inthe second end part 14B in the Z-axis direction. Thus, in themagnetoresistive effect element 14, as in the magnetoresistive effectelement 11, supplying the helical coil 6 with the setting current Iscauses the setting magnetic field SF− in the −X direction to be appliedto the magnetoresistive effect film MR4. Further, supplying the helicalcoil 6 with the resetting current Ir causes the resetting magnetic fieldRF+ in the +X direction to be applied to the magnetoresistive effectfilm MR4.

[Magnetoresistive Effect Element 13]

FIG. 4A is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect element 13 formed in the element formationregion X3 of the current detection unit 10B. Further, FIGS. 4B to 4E arecross-sectional diagrams each illustrating a portion of the currentdetection unit 10B. Note that FIG. 4A illustrates a plurality ofmagnetoresistive effect films MR3 constituting the magnetoresistiveeffect element 13 and the upper wiring line patterns 61UB and 62UBdisposed above the magnetoresistive effect films MR3, and omits othercomponents.

As illustrated in FIG. 4A, the magnetoresistive effect element 13 mayinclude a plurality of magnetoresistive effect films MR3 arranged in theY-axis direction. The plurality of magnetoresistive effect films MR3 maybe coupled to each other in series, and each extend in the W-axisdirection inclined with respect to both of the X-axis direction and theY-axis direction. Thus, the plurality of magnetoresistive effect filmsMR3 may each have a shape anisotropy in the W-axis direction. Each ofthe plurality of magnetoresistive effect films MR3 includes a first endpart 13A, a second end part 13B, and an intermediate part 13C betweenthe first end part 13A and the second end part 13B. Note that the firstend part 13A and the second end part 13B may be portions thatrespectively include a first end 13AT and a second end 13BT of themagnetoresistive effect film MR3 that are opposite to each other in theW-axis direction. Further, in FIG. 4A, an arrow with a reference signJS33 indicates a magnetization direction of a magnetization free layerS33 (described later) in an initial state in each magnetoresistiveeffect film MR3. The direction of the magnetization JS33 of themagnetization free layer S33 in the initial state may be substantiallyparallel to the W-axis direction. Further, an arrow with the referencesign JS31 in FIG. 4A indicates the direction of the magnetization JS31of the magnetization pinned layer S31 (described later) in eachmagnetoresistive effect film MR3. The direction of the magnetizationJS31 may be substantially parallel to the V-axis direction orthogonal tothe W-axis direction. The magnetoresistive effect films MR3 may thushave sensitivity in the V-axis direction.

The upper wiring line pattern 61UB and the upper wiring line pattern62UB of the helical coil 6 overlap the first end part 13A and the secondend part 13B, respectively, in the Z-axis direction. The lower wiringline patterns 61LA to 64LA of the helical coil 6 may each overlap thefirst end part 13A in the Z-axis direction. Likewise, the lower wiringline patterns 65LA to 68LA of the helical coil 6 may each overlap thesecond end part 13B in the Z-axis direction. In a specific butnon-limiting example, the upper wiring line pattern 61UB may overlap thefirst end 13AT in the first end part 13A in the Z-axis direction, andthe upper wiring line pattern 62UB may overlap the second end 13BT inthe second end part 13B in the Z-axis direction.

Accordingly, in the current detection unit 10B, as illustrated in FIGS.4A and 4B, supplying the helical coil 6 with the setting current Iscauses the setting magnetic field SF+ in the +X direction to be appliedto the magnetoresistive effect film MR3. As illustrated in FIG. 4C,supplying the helical coil 6 with the resetting current Ir causes theresetting magnetic field RF− in the −X direction to be applied to themagnetoresistive effect film MR3. Further, as illustrated in FIG. 4D, ina case where the signal current Im1 in the +Y direction flows throughthe bus 5, the signal magnetic field Hm1 in the +X direction may beapplied to the magnetoresistive effect film MR3. In this case, supplyingthe helical coil 6 with the feedback current If1 may cause the feedbackmagnetic field Hf1 in the −X direction to be applied to themagnetoresistive effect film MR3 to cancel out the signal magnetic fieldHm1. Further, as illustrated in FIG. 4E, in a case where the signalcurrent Im2 in the −Y direction flows through the bus 5, the signalmagnetic field Hm2 in the −X direction may be applied to themagnetoresistive effect film MR3. In this case, supplying the helicalcoil 6 with the feedback current If2 may cause the feedback magneticfield Hf2 in the +X direction to be applied to the magnetoresistiveeffect film MR3 to cancel out the signal magnetic field Hm2.

[Magnetoresistive Effect Element 12]

FIG. 4F is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect element 12 formed in the element formationregion X2. Note that FIG. 4F illustrates a plurality of magnetoresistiveeffect films MR2 constituting the magnetoresistive effect element 12 andthe upper wiring line patterns 61UB and 62UB disposed above themagnetoresistive effect films MR2, and omits other components.

As illustrated in FIG. 4F, the magnetoresistive effect element 12 mayinclude a plurality of magnetoresistive effect films MR2 arranged in theY-axis direction. The plurality of magnetoresistive effect films MR2 maybe coupled to each other in series, and each extend in the W-axisdirection inclined with respect to both of the X-axis direction and theY-axis direction. Thus, the plurality of magnetoresistive effect filmsMR2 may each have a shape anisotropy in the W-axis direction. Each ofthe plurality of magnetoresistive effect films MR2 includes a first endpart 12A, a second end part 12B, and an intermediate part 12C betweenthe first end part 12A and the second end part 12B. Note that the firstend part 12A and the second end part 12B may be portions thatrespectively include a first end 12AT and a second end 12BT of themagnetoresistive effect film MR2 that are opposite to each other in theW-axis direction. Further, in FIG. 4F, an arrow with a reference signJS23 indicates a magnetization direction of a magnetization free layerS23 (described later) in an initial state in each magnetoresistiveeffect film MR2. The direction of the magnetization JS23 of themagnetization free layer S23 in the initial state may be substantiallyparallel to the W-axis direction. Further, an arrow with the referencesign JS21 in FIG. 4F indicates the direction of the magnetization JS21of the magnetization pinned layer S21 (described later) in eachmagnetoresistive effect film MR2. The direction of the magnetizationJS21 may be substantially parallel to the V-axis direction orthogonal tothe W-axis direction. The magnetoresistive effect films MR2 may thushave sensitivity in the V-axis direction.

The upper wiring line pattern 61UB and the upper wiring line pattern62UB of the helical coil 6 overlap the first end part 12A and the secondend part 12B, respectively, in the Z-axis direction. The lower wiringline patterns 61LA to 64LA of the helical coil 6 may each overlap thefirst end part 12A in the Z-axis direction. Likewise, the lower wiringline patterns 65LA to 68LA of the helical coil 6 may each overlap thesecond end part 12B in the Z-axis direction. In a specific butnon-limiting example, the upper wiring line pattern 61UB may overlap thefirst end 12AT in the first end part 12A in the Z-axis direction, andthe upper wiring line pattern 62UB may overlap the second end 12BT inthe second end part 12B in the Z-axis direction. Accordingly, in themagnetoresistive effect element 12, as in the magnetoresistive effectelement 13, supplying the helical coil 6 with the setting current Iscauses the setting magnetic field SF+ in the +X direction to be appliedto the magnetoresistive effect film MR2. Further, supplying the helicalcoil 6 with the resetting current Ir causes the resetting magnetic fieldRF− in the −X direction to be applied to the magnetoresistive effectfilm MR2.

[Bus 5]

The bus 5 may be a conductor extending in, for example, the Y-axisdirection, and is configured to be supplied with a signal current Im(Im1, Im2) to be detected by the current detection apparatus 100. Aconstituent material of the bus 5 may include a highly electricallyconductive material such as Cu (copper), for example. An alloycontaining Fe (iron) or Ni (nickel), or stainless steel may also be usedas a constituent material of the bus 5. A signal current Im1 flowingthrough the inside of the bus 5 in, for example, the +Y direction,enables the bus 5 to generate a signal magnetic field Hm1 around the bus5. In this case, the generated signal magnetic field Hm1 is applied tothe magnetoresistive effect elements 11 to 14 in the +X direction. Asignal current Im2 flowing through the inside of the bus 5 in the −Ydirection generates a signal magnetic field Hm2 to be applied to themagnetoresistive effect elements 11 to 14 in the −X direction.

[Helical Coil 6]

FIGS. 5A and 5B are enlarged schematic perspective views of a portion ofthe helical coil 6. As already described, the helical coil 6 may includethe coil part 6A and the coil part 6B. As illustrated in FIGS. 5A and5B, the coil part 6A may be wound around the magnetoresistive effectelements 11 and 14 in a first winding direction CD1 while extendingalong the X-axis direction, for example. The coil part 6B may be woundaround the magnetoresistive effect elements 13 and 12 in a secondwinding direction CD2 opposite to the first winding direction CD1 whileextending along the X-axis direction. A first end of the coil part 6Aand a first end of the coil part 6A may be coupled to each other via acoupling part 6J. A terminal T3 may be coupled to the coupling part 6J.The terminal T3 may be a frame ground (FG), for example. A terminal T1may be coupled to a second end of the coil part 6A, and a terminal T2may be coupled to a second end of the coil part 6B. It is to be notedthat FIGS. 5A and 5B illustrate an example in which two currentdetection units 10A each corresponding to the coil part 6A and twocurrent detection units 10B each corresponding to the coil part 6B arecontinuous. Further, in FIGS. 5A and 5B, the two upper wiring linepatterns 61UA and 62UA are simplified into a single upper wiring line6UA, the eight lower wiring line patterns 61LA to 68LA are simplifiedinto a single lower wiring line 6LA, the two upper wiring line patterns61UB and 62UB are simplified into a single upper wiring line 6UB, andthe eight lower wiring line patterns 61LB to 68LB are simplified into asingle lower wiring line 6LB.

The helical coil 6 may be an electrical wiring line surrounding themagnetoresistive effect elements 11 to 14 while being electricallyinsulated from each of the magnetoresistive effect elements 11 to 14. Aconstituent material of the helical coil 6 may include, for example, ahighly electrically conductive material such as Cu (copper), as with thebus 5.

As illustrated in FIG. 5A, the helical coil 6 may be configured toreceive supply of the setting current Is and the resetting current Irbetween, for example, the terminal T1 and the terminal T2, from thepower supply. Note that arrows in FIG. 5A indicate the setting currentIs flowing from the terminal T2 to the terminal T1. The resettingcurrent Ir is to flow in the opposite direction to the directionindicated by the arrows in FIG. 5A, thus flowing from the terminal T1 tothe terminal T2.

As illustrated in FIG. 5B, the helical coil 6 may be configured toreceive supply of the feedback currents If1 and If2 between the terminalT1 and the terminal T3 and between the terminal T2 and the terminal T3from the power supply. Note that arrows in FIG. 5B indicate the feedbackcurrent If1 flowing from the terminal T3 to the terminal T1 and alsofrom the terminal T3 to the terminal T2. The feedback current If2 is toflow in the opposite directions to the directions indicated by thearrows in FIG. 5B, thus flowing from the terminal T1 to the terminal T3and also from the terminal T2 to the terminal T3.

[Magnetoresistive Effect Films MR1 to MR4]

The magnetoresistive effect films MR1 and MR3 may each have a resistancevalue that decreases upon application of a signal magnetic field in the+V direction and increases upon application of a signal magnetic fieldin the −V direction. The magnetoresistive effect films MR2 and MR4 mayeach have a resistance value that increases upon application of a signalmagnetic field in the +V direction and decreases upon application of asignal magnetic field in the −V direction.

FIG. 6A is an exploded perspective diagram illustrating a stackedstructure of the magnetoresistive effect film MR1. FIG. 6B is anexploded perspective diagram illustrating a stacked structure of themagnetoresistive effect film MR2. FIG. 6C is an exploded perspectivediagram illustrating a stacked structure of the magnetoresistive effectfilm MR3. FIG. 6D is an exploded perspective diagram illustrating astacked structure of the magnetoresistive effect film MR4.

As illustrated in FIGS. 6A to 6D, respectively, the magnetoresistiveeffect films MR1 to MR4 may each have a spin-valve structure including aplurality of stacked functional films including magnetic layers. In aspecific but non-limiting example, as illustrated in FIG. 6A, themagnetoresistive effect film MR1 may have a configuration in which themagnetization pinned layer S11, an intermediate layer S12, and themagnetization free layer S13 are stacked in order in the Z-axisdirection. The magnetization pinned layer S11 may have the magnetizationJS11 pinned in a +V direction. The intermediate layer S12 may be anonmagnetic body. The magnetization free layer S13 may have themagnetization JS13 that varies depending on magnetic flux density of thesignal magnetic field. Each of the magnetization pinned layer S11, theintermediate layer S12, and the magnetization free layer S13 may be athin film that extends in an X-Y plane. Accordingly, the orientation ofthe magnetization JS13 of the magnetization free layer S13 may berotatable in the X-Y plane.

As illustrated in FIG. 6B, the magnetoresistive effect film MR2 may havea configuration in which the magnetization pinned layer S21, anintermediate layer S22, and the magnetization free layer S23 are stackedin order in the Z-axis direction. The magnetization pinned layer S21 mayhave the magnetization JS21 pinned in a −V direction. The intermediatelayer S22 may be a nonmagnetic body. The magnetization free layer S23may have the magnetization JS23 that varies depending on magnetic fluxdensity of the signal magnetic field. Each of the magnetization pinnedlayer S21, the intermediate layer S22, and the magnetization free layerS23 may be a thin film that extends in the X-Y plane. Accordingly, theorientation of the magnetization JS23 of the magnetization free layerS23 may be rotatable in the X-Y plane.

As illustrated in FIG. 6C, the magnetoresistive effect film MR3 may havea configuration in which the magnetization pinned layer S31, anintermediate layer S32, and the magnetization free layer S33 are stackedin order in the Z-axis direction. The magnetization pinned layer S31 mayhave the magnetization JS31 pinned in the +V direction. The intermediatelayer S32 may be a nonmagnetic body. The magnetization free layer S33may have the magnetization JS33 that varies depending on magnetic fluxdensity of the signal magnetic field. Each of the magnetization pinnedlayer S31, the intermediate layer S32, and the magnetization free layerS33 may be a thin film that extends in the X-Y plane. Accordingly, theorientation of the magnetization JS33 of the magnetization free layerS33 may be rotatable in the X-Y plane.

As illustrated in FIG. 6D, the magnetoresistive effect film MR4 may havea configuration in which the magnetization pinned layer S41, anintermediate layer S42, and the magnetization free layer S43 are stackedin order in the Z-axis direction. The magnetization pinned layer S41 mayhave the magnetization JS41 pinned in the −V direction. The intermediatelayer S42 may be a nonmagnetic body. The magnetization free layer S43may have the magnetization JS43 that varies depending on magnetic fluxdensity of the signal magnetic field. Each of the magnetization pinnedlayer S41, the intermediate layer S42, and the magnetization free layerS43 may be a thin film that extends in the X-Y plane. Accordingly, theorientation of the magnetization JS43 of the magnetization free layerS43 may be rotatable in the X-Y plane.

As described above, the magnetization pinned layers S11 and S31 in themagnetoresistive effect films MR1 and MR3 may have their respectivemagnetizations JS11 and JS31 pinned in the +V direction, whereas themagnetization pinned layers S21 and S41 in the magnetoresistive effectfilms MR2 and MR4 may have their respective magnetizations JS21 and JS41pinned in the −V direction.

Note that in the magnetoresistive effect films MR1 to MR4, themagnetization pinned layers S11, S21, S31, and S41, the intermediatelayers S12, S22, S32, and S42, and the magnetization free layers S13,S23, S33, and S43 may each have a single-layer structure or amulti-layer structure including a plurality of layers.

The magnetization pinned layers S11, S21, S31, and S41 may each includea ferromagnetic material such as cobalt (Co), cobalt-iron alloy (CoFe),or cobalt-iron-boron alloy (CoFeB). Optionally, the magnetoresistiveeffect films MR1 to MR4 may be provided with respectiveantiferromagnetic layers (not illustrated) that are adjacent to themagnetization pinned layers S11, S21, S31, and S41 and located on theopposite side from the intermediate layers S12, S22, S32, and S42. Suchantiferromagnetic layers may each include an antiferromagnetic materialsuch as platinum-manganese alloy (PtMn) or iridium-manganese alloy(IrMn). In the magnetoresistive effect films MR1 to MR4, theantiferromagnetic layers may be in a state in which a spin magneticmoment in the +V direction and a spin magnetic moment in the −Vdirection cancel each other out completely, and may act to pin theorientations of the magnetizations JS11 and JS31 of the magnetizationpinned layers S11 and S31 adjacent to the antiferromagnetic layers tothe +V direction, or pin the orientations of the magnetizations JS21 andJS41 of the magnetization pinned layers S21 and S41 adjacent to theantiferromagnetic layers to the −V direction.

In a case where the spin-valve structure serves as a magnetic tunneljunction (MTJ) film, the intermediate layers S12, S22, S32, and S42 mayeach be a nonmagnetic tunnel barrier layer including, for example,magnesium oxide (MgO), and may each be thin enough to allow a tunnelcurrent based on quantum mechanics to pass therethrough. The tunnelbarrier layer including MgO may be obtainable by a process such assputtering using a target including MgO, oxidation treatment of a thinfilm of magnesium (Mg), or a reactive sputtering of magnesium in anoxygen atmosphere. Further, an oxide or a nitride of aluminum (Al),tantalum (Ta), or hafnium (Hf), as well as MgO, may also be used toconfigure the intermediate layers S12, S22, S32, and S42. Note that theintermediate layers S12, S22, S32, and S42 may each include a platinumgroup element such as ruthenium (Ru) or gold (Au), or a nonmagneticmetal such as copper (Cu). In such a case, the spin-valve structure mayserve as a giant magnetoresistive effect (GMR) film.

The magnetization free layers S13, S23, S33, and S43 may be softferromagnetic layers and include substantially the same materials. Themagnetization free layers S13, S23, S33, and S43 may include, forexample, cobalt-iron alloy (CoFe), nickel-iron alloy (NiFe), orcobalt-iron-boron alloy (CoFeB).

[Bridge Circuit 7]

The four magnetoresistive effect elements 11 to 14 may be bridged toform a bridge circuit 7, as illustrated in FIG. 7. The magnetoresistiveeffect elements 11 to 14 may each be configured to detect a change in asignal magnetic field Hm (Hm1, Hm2) to be detected. As described above,the magnetoresistive effect elements 11 and 13 may each have aresistance value that decreases upon application of the signal magneticfield Hm1 in the +V direction and increases upon application of thesignal magnetic field Hm2 in the −V direction. The magnetoresistiveeffect elements 12 and 14 may each have a resistance value thatincreases upon application of the signal magnetic field Hm1 in the +Vdirection and decreases upon application of the signal magnetic fieldHm2 in the −V direction. Accordingly, in response to a change in thesignal magnetic field Hm, the magnetoresistive effect elements 11 and 13and the magnetoresistive effect elements 12 and 14 may output respectivesignals that are different in phase by 180° from each other, forexample.

As illustrated in FIG. 7, the bridge circuit 7 may have a configurationin which the magnetoresistive effect elements 11 and 12 coupled inseries and the magnetoresistive effect elements 13 and 14 coupled inseries are coupled to each other in parallel. In a specific butnon-limiting example, in the bridge circuit 7, one end of themagnetoresistive effect element 11 and one end of the magnetoresistiveeffect element 12 may be coupled to each other at a node P1; one end ofthe magnetoresistive effect element 13 and one end of themagnetoresistive effect element 14 may be coupled to each other at anode P2; another end of the magnetoresistive effect element 11 andanother end of the magnetoresistive effect element 14 may be coupled toeach other at a node P3; and another end of the magnetoresistive effectelement 12 and another end of the magnetoresistive effect element 13 maybe coupled to each other at a node P4. Here, the node P3 may be coupledto a power supply Vcc, and the node P4 may be coupled to a groundterminal GND. The node P1 may be coupled to an output terminal Vout1,and the node P2 may be coupled to an output terminal Vout2. The outputterminal Vout1 and the output terminal Vout2 may each be coupled to aninput-side terminal of a difference detector 8, for example. Thedifference detector 8 may detect a potential difference between the nodeP1 and the node P2 (i.e., a difference between voltage drops occurringat the magnetoresistive effect element 11 and the magnetoresistiveeffect element 14) when a voltage is applied between the node P3 and thenode P4, and may output the detected potential difference to anarithmetic circuit 9 as a difference signal S.

In FIG. 7, arrows with reference signs JS11 and JS31 schematicallyindicate orientations of the magnetizations JS11 and JS31 of themagnetization pinned layers S11 and S31 in the magnetoresistive effectelements 11 and 13. Further, arrows with reference signs JS21 and JS41in FIG. 7 schematically indicate orientations of the magnetizations JS21and JS41 of the magnetization pinned layers S21 and S41 in themagnetoresistive effect elements 12 and 14. As illustrated in FIG. 7,the orientation of the magnetizations JS11 and JS31 and the orientationof the magnetizations JS21 and JS41 may be opposite to each other. Inother words, FIG. 7 illustrates that the resistance value of themagnetoresistive effect element 11 and the resistance value of themagnetoresistive effect element 13 may change (e.g., increase ordecrease) in the same direction in response to a change in the signalmagnetic field Hm. FIG. 7 also illustrates that both the resistancevalue of the magnetoresistive effect element 12 and the resistance valueof the magnetoresistive effect element 14 may change (decrease orincrease) in a direction opposite to the direction of the change in theresistance value of each of the magnetoresistive effect elements 11 and13 in response to the change in the signal magnetic field Hm.

A current I10 from the power supply Vcc may be divided into a current I1and a current I2 at the node P3. The current I1 or the current I2 may besupplied to each of the magnetoresistive effect elements 11 to 14constituting the bridge circuit 7. Signals e1 and e2 may be extractedfrom the nodes P1 and P2 of the bridge circuit 7, respectively. Thesignals e1 and e2 may flow into the difference detector 8.

[Operations and Workings of Current Detection Apparatus 100]

In the current detection apparatus 100 according to the present exampleembodiment, it is possible to detect changes in the signal magneticfields generated by the signal currents Im1 and Im2 flowing through thebus 5 by calculating a potential difference V0 at the arithmetic circuit9.

[Detecting Operation]

First, consider a state of the current detection apparatus 100 where nosignal magnetic field Hm is applied. Here, respective resistance valuesof the magnetoresistive effect elements 11 to 14 when a current I10 ispassed through the bridge circuit 7 are denoted by r1 to r4. The currentI10 from the power supply Vcc may be divided into two currents, i.e.,the current I1 and the current I2 at the node P3. Thereafter, thecurrent I1 having passed through the magnetoresistive effect element 11and the magnetoresistive effect element 12 and the current I2 havingpassed through the magnetoresistive effect element 14 and themagnetoresistive effect element 13 may join into one at the node P4. Insuch a case, a potential difference V between the node P3 and the nodeP4 is represented as follows.

V=I1*r1+I1*r2=I2*r4+I2*r3=I1*(r1+r2)=I2*(r4+r3)  (1)

Further, a potential V1 at the node P1 and a potential V2 at the node P2are represented as follows.

V1=V−I1*r1

V2=V−I2*r4

Accordingly, the potential difference V0 between the node P1 and thenode P2 is as follows.

V0=V2−V1=(V−I2*r4)−(V−I1*r1)=I1*r1−I2*r4  (2)

Here, from the equation (1), the following equation holds.

V0=r1/(r1+r2)×V−r4/(r4+r3)×V={r1/(r1+r2)−r4/(r4+r3)}×V  (3)

For the bridge circuit 7, it is possible to determine an amount ofchange in resistance by measuring the potential difference V0 betweenthe node P2 and the node P1 represented by the above equation (3) uponapplication of the signal magnetic field Hm. Suppose here thatapplication of the signal magnetic field Hm results in changes ofrespective resistance values R1 to R4 of the magnetoresistive effectelements 11 to 14 by amounts of changes ΔR1 to ΔR4, respectively. Inother words, suppose that the respective resistance values R1 to R4 ofthe magnetoresistive effect elements 11 to 14 after application of thesignal magnetic field Hm are as follows.

R1=r1+ΔR1

R2=r2+ΔR2

R3=r3+ΔR3

R4=r4+ΔR4

In this case, from the equation (3), the potential difference V0 uponapplication of the signal magnetic field Hm is as follows.

V0={(r1+ΔR1)/(r1+ΔR1+r2+ΔR2)−(r4+ΔR4)/(r4+ΔR4+r3+ΔR3)}×V   (4)

Because the current detection apparatus 100 may be configured to allowthe resistance values R1 and R3 of the magnetoresistive effect elements11 and 13 and the resistance values R2 and R4 of the magnetoresistiveeffect elements 12 and 14 to exhibit changes in opposite directions toeach other, the amount of change ΔR4 and the amount of change ΔR1 maycancel each other out, and also the amount of change ΔR3 and the amountof change ΔR2 may cancel each other out. In this case, if comparison ismade between before and after the application of the signal magneticfield, there is substantially no increase in denominators of respectiveterms of the equation (4). In contrast, an increase or a decreaseappears in numerators of the respective terms because the amount ofchange ΔR1 and the amount of change ΔR4 always have opposite signs.

Suppose that all of the magnetoresistive effect elements 11 to 14 haveexactly the same characteristics, i.e., suppose that r1=r2=r3=r4=R andthat ΔR1=−ΔR2=ΔR3=−ΔR4=ΔR. In such a case, the equation (4) is expressedas follows.

V0={(R+ΔR)/(2×R)−(R−ΔR)/(2×R)}×V=(ΔR/R)×V

In such a manner, it is possible to measure the magnitudes of signalmagnetic fields Hm by using the magnetoresistive effect elements 11 to14 whose characteristic values such as ΔR/R are known, and this makes itpossible to estimate the magnitudes of the signal currents Im1 and Im2that generate the signal magnetic fields Hm.

In some embodiments, the current detection apparatus 100 may include acontroller 70. The controller 70 may be a microcomputer, for example.The controller 70 may include a central processing unit (CPU) that isconfigured to execute a control program to carry out predeterminedcontrol processing. The controller 70 may be configured to sequentiallycontrol the magnitudes of the feedback currents If1 and If2 to generatefeedback magnetic fields Hf1 and Hf2 having intensities that cancel outthe signal magnetic fields Hm generated by the signal currents Im1 andIm2 flowing through the bus 5, in other words, to allow an output fromthe bridge circuit 7 to remain zero. In such a case, it is possible toassume the magnitudes of the feedback currents If1 and If2 to besubstantially equal to those of the signal currents Im1 and Im2 flowingthrough the bus 5.

[Setting and Resetting Operations]

For a current detection apparatus of this kind, magnetizations of themagnetization free layers in the magnetoresistive effect elements mayoptionally be once aligned in a predetermined direction beforeperforming an operation of detecting a signal magnetic field. One reasonfor this is that it serves to increase accuracy of the operation ofdetecting the signal magnetic field Hm. In a specific but non-limitingexample, an external magnetic field having a known magnitude may beapplied alternately in a predetermined direction and in a directionopposite thereto. Such operations will be referred to as setting andresetting operations on the magnetization of a magnetization free layer.

In the current detection apparatus 100 of the present exampleembodiment, the setting operation may be carried out by supplying thehelical coil 6 with a setting current Is. Supplying the helical coil 6with the setting current Is causes each of a setting magnetic field SF−and a setting magnetic field SF+ to be generated around the helical coil6, as illustrated in FIGS. 3B and 4B, respectively. As a result, in thecurrent detection unit 10A, it is possible to apply the setting magneticfield SF− in the −X direction to the magnetoresistive effect films MR1and MR4 of the magnetoresistive effect elements 11 and 14. This causesthe magnetizations of the magnetization free layers S13 and S43 of themagnetoresistive effect films MR1 and MR4 to be oriented in the −Wdirection, thus carrying out the setting operation. In the currentdetection unit 10B, it is possible to apply the setting magnetic fieldSF+ in the +X direction to the magnetoresistive effect films MR2 and MR3of the magnetoresistive effect elements 12 and 13. This causes themagnetizations of the magnetization free layers S23 and S33 of themagnetoresistive effect films MR2 and MR3 to be oriented in the +Wdirection, thus carrying out the setting operation. Further, theresetting operation may be carried out by supplying the helical coil 6with a resetting current Ir. Supplying the helical coil 6 with theresetting current Ir causes each of a resetting magnetic field RF+ and aresetting magnetic field RF− to be generated around the helical coil 6,as illustrated in FIGS. 3C and 4C, respectively. As a result, in thecurrent detection unit 10A, it is possible to apply the resettingmagnetic field RF+ in the +X direction to the magnetoresistive effectfilms MR1 and MR4 of the magnetoresistive effect elements 11 and 14.This causes the magnetizations of the magnetization free layers S13 andS43 of the magnetoresistive effect films MR1 and MR4 to be oriented inthe +W direction, thus carrying out the resetting operation. In thecurrent detection unit 10B, it is possible to apply the resettingmagnetic field RF− in the −X direction to the magnetoresistive effectfilms MR2 and MR3 of the magnetoresistive effect elements 12 and 13.This causes the magnetizations of the magnetization free layers S23 andS33 of the magnetoresistive effect films MR2 and MR3 to be oriented inthe −W direction, thus carrying out the resetting operation.

[Example Effects of Current Detection Apparatus 100]

In the present example embodiment, the upper wiring line pattern 61UAand the upper wiring line pattern 62UA of the helical coil 6 overlap thefirst end part 11A and the second end part 11B, respectively, in theZ-axis direction in the magnetoresistive effect element 11, for example.As a result, the intensities (absolute values) of the setting magneticfield SF− and the resetting magnetic field RF+ to be applied to thefirst end part 11A and the intensities (absolute values) of the settingmagnetic field SF− and the resetting magnetic field RF+ to be applied tothe second end part 11B may be higher than the intensities (absolutevalues) of the setting magnetic field SF− and the resetting magneticfield RF+ to be applied to the intermediate part 11C. This enables thesetting magnetic field SF and the resetting magnetic field RF generatedby the helical coil 6 to be effectively applied to the first end part11A and the second end part 11B of the magnetoresistive effect film MR1.The direction of the magnetization JS13 of the magnetization free layerS13 is thereby evenly and sufficiently set and reset throughout themagnetoresistive effect film MR1. Similar workings are also obtainablefor the magnetoresistive effect elements 12 to 14. Consequently,according to the current detection apparatus 100 of the present exampleembodiment, it is possible to achieve high accuracy of current detectioneven in a case where dimensions thereof are reduced.

Furthermore, in some embodiments, instead of using a conductor that iswide enough to overlap the whole of each magnetoresistive effect film,the helical coil 6 may be provided that overlaps only respectiveportions (the first end parts 11A to 14A and the second end parts 11B to14B) of the magnetoresistive effect films. This allows, for example, theupper wiring line patterns 61UA, 61UB, 62UA and 62UB to be small inwidth. This consequently allows a value of a current that is to besupplied to the helical coil 6 in order to obtain the predeterminedsetting magnetic fields SF and resetting magnetic fields RF and thepredetermined feedback magnetic fields Hf1 and Hf2 to be kept low.

Further, in some embodiments, a branch part may be formed in somesections of the helical coil 6. In a specific but non-limiting example,the upper wiring line 6UA may be configured by the two upper wiring linepatterns 61UA and 62UA coupled to each other in parallel, and the lowerwiring line 6LA may be configured by the eight lower wiring linepatterns 61LA to 68LA coupled to each other in parallel. Suchembodiments make it possible to arrange a larger number ofmagnetoresistive effect films MR1 to MR4 than the number of turns of thehelical coil 6 in the Y-axis direction, as compared with a case of usinga helical coil that includes no such branch part. This helps to achievehigher integration.

Further, in some embodiments, the helical coil 6 may be used in whichthe coil part 6A and the coil part 6B wound in opposite directions toeach other as illustrated in FIGS. 5A and 5B are integrated into one.This makes it possible to form within a narrower region the plurality ofmagnetoresistive effect elements 11 to 14 including the magnetoresistiveeffect films MR1 to MR4, the magnetoresistive effect films MR1 to MR4including two pairs of magnetoresistive effect films that are oppositeto each other in terms of the setting/resetting direction for themagnetization directions of the respective magnetization free layers.Furthermore, the use of the single helical coil 6 including the integralcoil parts 6A and 6B makes it possible to reduce the number of terminalsfor power feeding, as compared with a case of providing two helicalcoils. This helps to achieve higher integration.

Further, in some embodiments, the setting/resetting direction for themagnetization free layers S13 and S43 of the magnetoresistive effectfilms MR1 and MR4 and the setting/resetting direction for themagnetization free layers S23 and S33 of the magnetoresistive effectfilms MR2 and MR3 may be opposite to each other. By configuring thebridge circuit 7 with the magnetoresistive effect elements that includepairs of magnetoresistive effect films in which the magnetizationdirections of the respective magnetization free layers upon setting orresetting are opposite to each other, it is possible to reduce noiseresulting from an unwanted disturbance magnetic field and reduce errorresulting from stress distortion.

2. Modification Examples

The technology has been described above with reference to the exampleembodiment. However, the technology is not limited thereto, and may bemodified in a variety of ways. For example, in the foregoing exampleembodiment, four magnetoresistive effect elements are used to form afull-bridge circuit. However, in some embodiments of the disclosure, forexample, two magnetoresistive effect elements may be used to form ahalf-bridge circuit. Further, the plurality of magnetoresistive effectfilms may be identical with each other or different from each other inshape and dimensions. The dimensions of components and the layouts ofthe components are merely illustrative, and are not limited thereto.

In the foregoing example embodiment, the current detection apparatusincluding the helical coil 6 whose winding direction reverses at anintermediate point along the coil has been described; however, thetechnology is not limited thereto. In some embodiments of thedisclosure, the current detection apparatus may include a helical coilwound in one direction, like a helical coil 60 illustrated in FIGS. 8and 9, for example. FIGS. 8 and 9 are enlarged schematic perspectiveviews of a portion of the helical coil 60 as a modification example ofthe helical coil 6, and correspond to FIGS. 5A and 5B, respectively. Thehelical coil 60 may include a coil part 60A and a coil part 60B. Asillustrated in FIGS. 8 and 9, the coil part 60A may be wound around themagnetoresistive effect elements 11 and 14 in the first windingdirection CD1 while extending along the X-axis direction, for example.The coil part 60B may be wound around the magnetoresistive effectelements 13 and 12 in the first winding direction CD1 while extendingalong the X-axis direction. A first end of the coil part 60A and a firstend of the coil part 60B may be coupled to each other via a couplingpart 60J. The terminal T3 may be coupled to the coupling part 60J. Theterminal T3 may be a frame ground (FG), for example. The terminal T1 maybe coupled to a second end of the coil part 60A, and the terminal T2 maybe coupled to a second end of the coil part 60B.

As illustrated in FIG. 8, the helical coil 60 may be configured toreceive supply of the feedback currents If1 and If2 between, forexample, the terminal T1 and the terminal T2 from the power supply. Notethat in FIG. 8, arrows indicate the feedback current If1 flowing fromthe terminal T2 to the terminal T1. The feedback current If2 is to flowin the opposite direction to the direction indicated by the arrows inFIG. 8, thus flowing from the terminal T1 to the terminal T2.

As illustrated in FIG. 9, the helical coil 60 may be configured toreceive supply of the setting current Is and the resetting current Irbetween the terminal T1 and the terminal T3 and between the terminal T2and the terminal T3 from the power supply. Note that in FIG. 9, arrowsindicate the setting current Is flowing from the terminal T3 to theterminal T1 and also from the terminal T3 to the terminal T2. Theresetting current Ir is to flow in the opposite directions to thedirections indicated by the arrows in FIG. 9, thus flowing from theterminal T1 to the terminal T3 and also from the terminal T2 to theterminal T3.

In the present modification example, the setting and resettingoperations may be carried out by alternately applying the settingcurrent Is and the resetting current Ir between the terminal T1 and theterminal T3 and between the terminal T2 and the terminal T3. Further, indetecting the signal currents Im1 and Im2 flowing through the bus 5,supplying the feedback currents If1 and If2 between the terminal T1 andthe terminal T2 makes it possible to measure the signal currents Im1 andIm2.

In the foregoing example embodiment, the current detection apparatusthat detects a change in a signal current flowing through a conductorhas been described; however, uses of the technology are not limitedthereto. The technology is also applicable, for example, to anelectromagnetic compass that detects geomagnetism, like a magnetic fielddetection apparatus 200 according to one example embodiment of thedisclosure illustrated in FIGS. 10A and 10B. The magnetic fielddetection apparatus 200 illustrated in FIGS. 10A and 10B may be atwo-axis magnetic detection compass that is configured to detect achange in a magnetic field in the Y-axis direction and a change in themagnetic field in the Z-axis direction, for example. FIG. 10A is aschematic planar diagram illustrating an overall configuration exampleof the magnetic field detection apparatus 200. FIG. 10B is a circuitdiagram illustrating a circuit configuration example of the magneticfield detection apparatus 200.

As illustrated in FIG. 10A, the magnetic field detection apparatus 200may include two magnetic field detection units AR2 and AR3 on asubstrate 2.

As illustrated in FIG. 10B, in the magnetic field detection apparatus200, a bridge circuit 7L using four magnetoresistive effect elements 21to 24 may be formed in the magnetic field detection unit AR2, and abridge circuit 7R using four magnetoresistive effect elements 31 to 34may be formed in the magnetic field detection unit AR3. It is possiblefor the magnetic field detection apparatus 200 to detect changes in themagnetic field in the Y-axis direction and the Z-axis direction by usingthe two bridge circuits 7L and 7R. The magnetoresistive effect elements21 to 24 and 31 to 34 are configured to detect a change in a signalmagnetic field to be detected. Here, the magnetoresistive effectelements 21, 23, 31, and 33 may each have a resistance value thatdecreases upon application of a signal magnetic field in the +Ydirection or a signal magnetic field in a +Z direction and increasesupon application of a signal magnetic field in the −Y direction or asignal magnetic field in a −Z direction. The magnetoresistive effectelements 22, 24, 32, and 34 may each have a resistance value thatincreases upon application of a signal magnetic field in the +Ydirection or a signal magnetic field in the +Z direction and decreasesupon application of a signal magnetic field in the −Y direction or asignal magnetic field in the −Z direction. Accordingly, in response to achange in the signal magnetic field, the magnetoresistive effectelements 21, 23, 31, and 33 and the magnetoresistive effect elements 22,24, 32, and 34 may output signals that are different in phase by 180°from each other, for example. The signals extracted from the bridgecircuit 7L may flow into a difference detector 8L, and the signalsextracted from the bridge circuit 7R may flow into a difference detector8R. A difference signal SL from the difference detector 8L and adifference signal SR from the difference detector 8R may both flow intothe arithmetic circuit 9.

The magnetic field detection unit AR2 may be substantially the same instructure as the current detection apparatus 100 described in theforegoing example embodiment except that: the bus 5 is not provided;element formation regions YZ1 and YZ4 are provided in place of theelement formation regions X1 to X4; and a helical coil C2 is provided inplace of the helical coil 6. The helical coil C2 may be substantiallythe same in structure as the helical coil 6, and may include coil partsC2A and C2B. The respective upper wiring lines in the coil parts C2A andC2B may each be branched into four upper wiring lines that are coupledto each other in parallel, and may be configured to allow a settingcurrent IC2 in the +Y direction to flow therethrough.

The magnetic field detection unit AR3 may be substantially the same instructure as the current detection apparatus 100 described in theforegoing example embodiment except that: the bus 5 is not provided;element formation regions YZ3 and YZ2 are provided in place of theelement formation regions X1 to X4; and a helical coil C3 is provided inplace of the helical coil 6. The helical coil C3 may be substantiallythe same in structure as the helical coil 6, and may include coil partsC3A and C3B. The respective upper wiring lines in the coil parts C3A andC3B may each be branched into four upper wiring lines that are coupledto each other in parallel, and may be configured to allow a resettingcurrent IC3 in the −Y direction to flow therethrough.

FIG. 11A is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect elements 21 and 31 formed in the elementformation region YZ1. FIG. 11B illustrates a cross section along lineXIB-XIB in FIG. 11A as viewed in the direction of the arrows. In theelement formation region YZ1, as illustrated in FIG. 11A, inclinedsurfaces 2L and 2R each extending in the V-axis direction may be formedon a surface of the substrate 2. The V-axis direction may form an angleθ2 with respect to the Y-axis direction. The inclined surfaces 2L and 2Rmay both be inclined with respect to the X-Y plane. The inclined surface2L and the inclined surface 2R may also be inclined with respect to eachother. A plurality of magnetoresistive effect films MRL1 and a pluralityof magnetoresistive effect films MRR1 each extending in the V-axisdirection may be formed on the inclined surface 2L and the inclinedsurface 2R, respectively. The plurality of magnetoresistive effect filmsMRL1 may be coupled to each other in series to form the magnetoresistiveeffect element 21. The plurality of magnetoresistive effect films MRR1may be coupled to each other in series to form the magnetoresistiveeffect element 31. Note that FIG. 11A illustrates the plurality ofmagnetoresistive effect films MRL1 forming the magnetoresistive effectelement 21, the plurality of magnetoresistive effect films MRR1 formingthe magnetoresistive effect element 31, and an upper wiring line patternC2UA disposed thereabove, and omits other components.

The V-axis direction may correspond to a specific but non-limitingexample of a “first axis direction” according to one embodiment of thedisclosure. The inclined surface 2L may correspond to a specific butnon-limiting example of a “first surface” according to one embodiment ofthe disclosure. The inclined surface 2R may correspond to a specific butnon-limiting example of a “second surface” according to one embodimentof the disclosure.

FIG. 12 is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect elements 22 and 32 formed in the elementformation region YZ2. In the element formation region YZ2, the inclinedsurfaces 2L and 2R each extending in the V-axis direction may also beformed on the surface of the substrate 2. The V-axis direction may formthe angle θ2 with respect to the Y-axis direction. A plurality ofmagnetoresistive effect films MRL2 and a plurality of magnetoresistiveeffect films MRR2 each extending in the V-axis direction may be formedon the inclined surface 2L and the inclined surface 2R, respectively.The plurality of magnetoresistive effect films MRL2 may be coupled toeach other in series to form the magnetoresistive effect element 22. Theplurality of magnetoresistive effect films MRR2 may be coupled to eachother in series to form the magnetoresistive effect element 32.

FIG. 13 is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect elements 23 and 33 formed in the elementformation region YZ3. In the element formation region YZ3, the inclinedsurfaces 2L and 2R each extending in the V-axis direction may also beformed on the surface of the substrate 2. The V-axis direction may formthe angle θ2 with respect to the Y-axis direction. A plurality ofmagnetoresistive effect films MRL3 and a plurality of magnetoresistiveeffect films MRR3 each extending in the V-axis direction may be formedon the inclined surface 2L and the inclined surface 2R, respectively.The plurality of magnetoresistive effect films MRL3 may be coupled toeach other in series to form the magnetoresistive effect element 23. Theplurality of magnetoresistive effect films MRR3 may be coupled to eachother in series to form the magnetoresistive effect element 33.

FIG. 14 is a planar diagram for explaining a detailed configuration ofthe magnetoresistive effect elements 24 and 34 formed in the elementformation region YZ4. In the element formation region YZ4, the inclinedsurfaces 2L and 2R each extending in the V-axis direction may also beformed on the surface of the substrate 2. The V-axis direction may formthe angle θ2 with respect to the Y-axis direction. A plurality ofmagnetoresistive effect films MRL4 and a plurality of magnetoresistiveeffect films MRR4 each extending in the V-axis direction may be formedon the inclined surface 2L and the inclined surface 2R, respectively.The plurality of magnetoresistive effect films MRL4 may be coupled toeach other in series to form the magnetoresistive effect element 24. Theplurality of magnetoresistive effect films MRR4 may be coupled to eachother in series to form the magnetoresistive effect element 34.

It should be noted that combining the foregoing magnetic field detectionapparatus 200 with a magnetic field detection unit (which will bereferred to as a magnetic field detection unit ΔR1 for convenience) thatis configured to detect a change in a magnetic field in the X-axisdirection makes it possible to implement a three-axis magnetic fielddetection compass that detects changes in a magnetic field in three-axisdirections. The magnetic field detection unit ΔR1 herein may be a unitthat is substantially the same in structure as the current detectionapparatus 100 described in the foregoing example embodiment except thatthe bus 5 is not provided.

Furthermore, the technology encompasses any possible combination of someor all of the various embodiments and the modifications described hereinand incorporated herein.

It is possible to achieve at least the following configurations from theforegoing embodiments and modification examples of the disclosure.

(1)

-   -   A magnetic field detection apparatus including:    -   a magnetoresistive effect element including a magnetoresistive        effect film that extends in a first axis direction and includes        a first end part, a second end part, and an intermediate part        between the first end part and the second end part; and    -   a conductor including a first part and a second part that each        extend in a second axis direction inclined with respect to the        first axis direction,    -   the first part and the second part respectively overlapping the        first end part and the second end part in a fourth axis        direction orthogonal to the second axis direction.        (2)    -   The magnetic field detection apparatus according to (1), in        which the first part and the second part are coupled to each        other in parallel.        (3)    -   The magnetic field detection apparatus according to (1) or (2),        in which    -   the conductor further includes:        -   a plurality of third parts each extending in the second axis            direction, the third parts being disposed opposite to the            first part, with the magnetoresistive effect element being            interposed between the first part and the third parts in the            fourth axis direction; and        -   a plurality of fourth parts each extending in the second            axis direction, the fourth parts being disposed opposite to            the second part, with the magnetoresistive effect element            being interposed between the second part and the fourth            parts in the fourth axis direction.            (4)    -   The magnetic field detection apparatus according to any one        of (1) to (3), in which the conductor includes a helical coil        that is wound around the magnetoresistive effect element while        extending along a third axis direction orthogonal to the second        axis direction.        (5)    -   The magnetic field detection apparatus according to (4), in        which    -   a plurality of the magnetoresistive effect elements includes a        first magnetoresistive effect element and a second        magnetoresistive effect element, and    -   the helical coil includes:        -   a first helical coil part that is wound around the first            magnetoresistive effect element in a first winding direction            while extending along the third axis direction; and        -   a second helical coil part that is wound around the second            magnetoresistive effect element in a second winding            direction opposite to the first winding direction while            extending along the third axis direction, the second helical            coil part being coupled to the first helical coil part in            series.            (6)    -   The magnetic field detection apparatus according to any one        of (1) to (5), in which    -   the first end part and the second end part respectively include        a first end and a second end of the magnetoresistive effect film        that are opposite to each other in the first axis direction,    -   the first part overlaps the first end in the first end part in        the fourth axis direction, and    -   the second part overlaps the second end in the second end part        in the fourth axis direction.        (7)    -   The magnetic field detection apparatus according to any one        of (1) to (4), in which    -   a plurality of the magnetoresistive effect elements includes a        first magnetoresistive effect element including a first        magnetization free layer, and a second magnetoresistive effect        element including a second magnetization free layer, and    -   the conductor is configured to generate the induction magnetic        field to cause a magnetization of the first magnetization free        layer and a magnetization of the second magnetization free layer        to be oriented in opposite directions.        (8)    -   A magnetic field detection apparatus including:    -   a first magnetoresistive effect element including a first        magnetoresistive effect film that extends in a first axis        direction;    -   a first conductor including a first part and a second part that        each extend in a second axis direction inclined with respect to        the first axis direction and that are adjacent to each other in        a third axis direction different from both of the first axis        direction and the second axis direction;    -   a second conductor including a third part and a fourth part that        each extend in the second axis direction and that are adjacent        to each other in the third axis direction; and    -   a second magnetoresistive effect element including a second        magnetoresistive effect film that extends in the first axis        direction, in which    -   the first magnetoresistive effect film includes a first end        part, a second end part, and a first intermediate part between        the first end part and the second end part,    -   the second magnetoresistive effect film includes a third end        part, a fourth end part, and a second intermediate part between        the third end part and the fourth end part,    -   the first part and the second part of the first conductor        respectively overlap the first end part and the second end part        of the first magnetoresistive effect film in a fourth axis        direction orthogonal to both of the second axis direction and        the third axis direction, and    -   the third part and the fourth part of the second conductor        respectively overlap the third end part and the fourth end part        of the second magnetoresistive effect film in the fourth axis        direction.        (9)    -   The magnetic field detection apparatus according to (8), further        including:    -   a substrate including a first surface and a second surface, the        first surface being parallel to the first axis direction and        inclined with respect to the second axis direction and the third        axis direction, the second surface being parallel to the first        axis direction and inclined with respect to the first surface;    -   a first bridge circuit; and    -   a second bridge circuit;    -   in which    -   the first bridge circuit includes a first pair of the first        magnetoresistive effect element and the second magnetoresistive        effect element, the first magnetoresistive effect film of the        first magnetoresistive effect element of the first pair being        provided on the first surface, the second magnetoresistive        effect film of the second magnetoresistive effect element of the        first pair being provided on the first surface, and    -   the second bridge circuit includes a second pair of the first        magnetoresistive effect element and the second magnetoresistive        effect element, the first magnetoresistive effect film of the        first magnetoresistive effect element of the second pair being        provided on the second surface, the second magnetoresistive        effect film of the second magnetoresistive effect element of the        second pair being provided on the second surface.        (10)    -   The magnetic field detection apparatus according to any one        of (1) to (9), in which    -   the magnetoresistive effect film includes a plurality of the        magnetoresistive effect films, and    -   the respective first end parts of every two of the        magnetoresistive effect films adjacent to each other in the        third axis direction are located at different positions in the        second axis direction.        (11)    -   The magnetic field detection apparatus according to any one        of (1) to (10), in which an angle of inclination of the second        axis direction with respect to the first axis direction is        substantially 45 degrees.        (12)    -   The magnetic field detection apparatus according to (10) or        (11), further including a substrate including a first surface        and a second surface, the first surface being parallel to the        first axis direction and inclined with respect to the second        axis direction and the fourth axis direction, the second surface        being parallel to the first axis direction and inclined with        respect to the first surface, in which    -   the plurality of magnetoresistive effect films includes a first        magnetoresistive effect film and a second magnetoresistive        effect film,    -   the first magnetoresistive effect film is provided on the first        surface, and    -   the second magnetoresistive effect film is provided on the        second surface.

The magnetic field detection apparatus according to at least oneembodiment of the disclosure provides high detection accuracy whilebeing small in size.

Although the disclosure has been described hereinabove in terms of theexample embodiment and modification examples, it is not limited thereto.It should be appreciated that variations may be made in the describedexample embodiment and modification examples by those skilled in the artwithout departing from the scope of the disclosure as defined by thefollowing claims. The limitations in the claims are to be interpretedbroadly based on the language employed in the claims and not limited toexamples described in this specification or during the prosecution ofthe application, and the examples are to be construed as non-exclusive.The use of the terms first, second, etc. do not denote any order orimportance, but rather the terms first, second, etc. are used todistinguish one element from another. The term “substantially” and itsvariants are defined as being largely but not necessarily wholly what isspecified as understood by one of ordinary skill in the art. The term“disposed on/provided on/formed on” and its variants as used hereinrefer to elements disposed directly in contact with each other orindirectly by having intervening structures therebetween. Moreover, noelement or component in this disclosure is intended to be dedicated tothe public regardless of whether the element or component is explicitlyrecited in the following claims.

What is claimed is:
 1. A magnetic field detection apparatus comprising:a magnetoresistive effect element including a magnetoresistive effectfilm that extends in a first axis direction and includes a first endpart, a second end part, and an intermediate part between the first endpart and the second end part; and a conductor including a first part anda second part that each extend in a second axis direction inclined withrespect to the first axis direction, the first part and the second partrespectively overlapping the first end part and the second end part in afourth axis direction orthogonal to the second axis direction.
 2. Themagnetic field detection apparatus according to claim 1, wherein thefirst part and the second part are coupled to each other in parallel. 3.The magnetic field detection apparatus according to claim 1, wherein theconductor further includes: a plurality of third parts each extending inthe second axis direction, the third parts being disposed opposite tothe first part, with the magnetoresistive effect element beinginterposed between the first part and the third parts in the fourth axisdirection; and a plurality of fourth parts each extending in the secondaxis direction, the fourth parts being disposed opposite to the secondpart, with the magnetoresistive effect element being interposed betweenthe second part and the fourth parts in the fourth axis direction. 4.The magnetic field detection apparatus according to claim 1, wherein theconductor comprises a helical coil that is wound around themagnetoresistive effect element while extending along a third axisdirection orthogonal to the second axis direction.
 5. The magnetic fielddetection apparatus according to claim 4, wherein a plurality of themagnetoresistive effect elements includes a first magnetoresistiveeffect element and a second magnetoresistive effect element, and thehelical coil includes: a first helical coil part that is wound aroundthe first magnetoresistive effect element in a first winding directionwhile extending along the third axis direction; and a second helicalcoil part that is wound around the second magnetoresistive effectelement in a second winding direction opposite to the first windingdirection while extending along the third axis direction, the secondhelical coil part being coupled to the first helical coil part inseries.
 6. The magnetic field detection apparatus according to claim 1,wherein the first end part and the second end part respectively includea first end and a second end of the magnetoresistive effect film thatare opposite to each other in the first axis direction, the first partoverlaps the first end in the first end part in the fourth axisdirection, and the second part overlaps the second end in the second endpart in the fourth axis direction.
 7. The magnetic field detectionapparatus according to claim 1, wherein a plurality of themagnetoresistive effect elements includes a first magnetoresistiveeffect element including a first magnetization free layer, and a secondmagnetoresistive effect element including a second magnetization freelayer, and the conductor is configured to generate the inductionmagnetic field to cause a magnetization of the first magnetization freelayer and a magnetization of the second magnetization free layer to beoriented in opposite directions.
 8. A magnetic field detection apparatuscomprising: a first magnetoresistive effect element including a firstmagnetoresistive effect film that extends in a first axis direction; afirst conductor including a first part and a second part that eachextend in a second axis direction inclined with respect to the firstaxis direction and that are adjacent to each other in a third axisdirection different from both of the first axis direction and the secondaxis direction; a second conductor including a third part and a fourthpart that each extend in the second axis direction and that are adjacentto each other in the third axis direction; and a second magnetoresistiveeffect element including a second magnetoresistive effect film thatextends in the first axis direction, wherein the first magnetoresistiveeffect film includes a first end part, a second end part, and a firstintermediate part between the first end part and the second end part,the second magnetoresistive effect film includes a third end part, afourth end part, and a second intermediate part between the third endpart and the fourth end part, the first part and the second part of thefirst conductor respectively overlap the first end part and the secondend part of the first magnetoresistive effect film in a fourth axisdirection orthogonal to both of the second axis direction and the thirdaxis direction, and the third part and the fourth part of the secondconductor respectively overlap the third end part and the fourth endpart of the second magnetoresistive effect film in the fourth axisdirection.
 9. The magnetic field detection apparatus according to claim8, further comprising: a substrate including a first surface and asecond surface, the first surface being parallel to the first axisdirection and inclined with respect to the second axis direction and thethird axis direction, the second surface being parallel to the firstaxis direction and inclined with respect to the first surface; a firstbridge circuit; and a second bridge circuit; wherein the first bridgecircuit includes a first pair of the first magnetoresistive effectelement and the second magnetoresistive effect element, the firstmagnetoresistive effect film of the first magnetoresistive effectelement of the first pair being provided on the first surface, thesecond magnetoresistive effect film of the second magnetoresistiveeffect element of the first pair being provided on the first surface,and the second bridge circuit includes a second pair of the firstmagnetoresistive effect element and the second magnetoresistive effectelement, the first magnetoresistive effect film of the firstmagnetoresistive effect element of the second pair being provided on thesecond surface, the second magnetoresistive effect film of the secondmagnetoresistive effect element of the second pair being provided on thesecond surface.
 10. The magnetic field detection apparatus according toclaim 1, wherein the magnetoresistive effect film comprises a pluralityof the magnetoresistive effect films, and the respective first end partsof every two of the magnetoresistive effect films adjacent to each otherin the third axis direction are located at different positions in thesecond axis direction.
 11. The magnetic field detection apparatusaccording to claim 1, wherein an angle of inclination of the second axisdirection with respect to the first axis direction is substantially 45degrees.
 12. The magnetic field detection apparatus according to claim10, further comprising a substrate including a first surface and asecond surface, the first surface being parallel to the first axisdirection and inclined with respect to the the second axis direction andthe fourth axis direction, the second surface being parallel to thefirst axis direction and inclined with respect to the first surface,wherein the plurality of magnetoresistive effect films includes a firstmagnetoresistive effect film and a second magnetoresistive effect film,the first magnetoresistive effect film is provided on the first surface,and the second magnetoresistive effect film is provided on the secondsurface.